JPH027190B2 - - Google Patents

Info

Publication number
JPH027190B2
JPH027190B2 JP58048139A JP4813983A JPH027190B2 JP H027190 B2 JPH027190 B2 JP H027190B2 JP 58048139 A JP58048139 A JP 58048139A JP 4813983 A JP4813983 A JP 4813983A JP H027190 B2 JPH027190 B2 JP H027190B2
Authority
JP
Japan
Prior art keywords
thyristor
voltage
base layer
pilot
breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58048139A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59172771A (ja
Inventor
Hiromichi Oohashi
Yoshihiro Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58048139A priority Critical patent/JPS59172771A/ja
Priority to DE8383110486T priority patent/DE3369234D1/de
Priority to EP83110486A priority patent/EP0108961B1/en
Publication of JPS59172771A publication Critical patent/JPS59172771A/ja
Publication of JPH027190B2 publication Critical patent/JPH027190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes

Landscapes

  • Thyristors (AREA)
JP58048139A 1982-11-15 1983-03-23 サイリスタ Granted JPS59172771A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58048139A JPS59172771A (ja) 1983-03-23 1983-03-23 サイリスタ
DE8383110486T DE3369234D1 (en) 1982-11-15 1983-10-20 Thyristor device protected from an overvoltage
EP83110486A EP0108961B1 (en) 1982-11-15 1983-10-20 Thyristor device protected from an overvoltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58048139A JPS59172771A (ja) 1983-03-23 1983-03-23 サイリスタ

Publications (2)

Publication Number Publication Date
JPS59172771A JPS59172771A (ja) 1984-09-29
JPH027190B2 true JPH027190B2 (en]) 1990-02-15

Family

ID=12795005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58048139A Granted JPS59172771A (ja) 1982-11-15 1983-03-23 サイリスタ

Country Status (1)

Country Link
JP (1) JPS59172771A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3155797B2 (ja) * 1991-12-26 2001-04-16 株式会社日立製作所 過電圧自己保護型半導体装置、及び、それを使用した半導体回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016105B2 (ja) * 1977-07-01 1985-04-23 日本インタ−ナシヨナル整流器株式会社 半導体制御整流素子

Also Published As

Publication number Publication date
JPS59172771A (ja) 1984-09-29

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